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          ? 2000 IXYS All rights reserved 1 - 2 VRSM V(BR)min VRRM Anode Cathode V V V on stud on stud 900 - 800 DS75-08B DSI75-08B 1300 - 1200 DS75-12B DSI75-12B 1300 1300 1200 DSA75-12B DSAI75-12B 1700 1760 1600 DSA75-16B DSAI75-16B 1900 1950 1800 DSA75-18B DSAI75-18B Only for Avalanche Diodes Symbol Test Conditions Maximum Ratings I IF(RMS)F(AV)M T TVJcase = 100C; 180 sine 110 A = TVJM 160 A PRSM DSA(I) types, TVJ = T VJM, tp = 10 s20kWInternational standard package,JEDEC DO-203 AB (DO-5) IFSM T VVJR = 45C; t = 10 ms (50 Hz), sine 1400 A = 0 t = 8.3 ms (60 Hz), sine 1500 A T VVJR = T = 0 t = 8.3 ms (60 Hz), sine 1310 AVJM t = 10 ms (50 Hz), sine 1250 A I2t T VVJR = 45C t = 10 ms (50 Hz), sine 9800 A2s = 0 t = 8.3 ms (60 Hz), sine 9450 A2s T VVJR = T = 0 t = 8.3 ms (60 Hz), sine 7210 AVJM 2s t = 10 ms (50 Hz), sine 7820 A2s T TVJ TVJMstg -40...+180 C 180 C -40...+180 C Md Mounting torque 2.4-4.5 Nm 21-40 lb.in. Weight 21 g VRRM = 800-1800 V IF(RMS) = 160 A IF(AV)M = 110 A Features Planar glassivated chips Applications High power rectifiers Field supply for DC motors Power supplies Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Symbol Test Conditions Characteristic Values IR TVJ = TVJM; VR = V RRM 6mA VF IF= 150 A; TVJ = 25 C 1.17 V V r T0 T For power-loss calculations only 0.75 V TVJ = TVJM 2m R RthJCthJH DC current 0.5 K/W DC current 0.9 K/W d dS aA Creepage distance on surface 4.05 mm Strike distance through air 3.9 mm Max. allowable acceleration 100 m/s2 Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions DS 75 DSI 75 DSA 75 DSAI 75 744 Rectifier Diode Avalanche Diode A = Anode C = Cathode DO-203 AB 1/4-28UNF DS DSIA DSA DSAIC C A |